Suppose we have an NMOS transistor that has $g_m=2 mS$ and $r_d = 5 \mathrm{k} \Omega$ for a Q point of $V_{GSQ} =2 V, I_{DQ}=4 mA,$ and $V_ {DSQ}= 10 V.$ Sketch the drain characteristics to scale for a small region around the Q point, say, for $v_{GS}=1.8,$ 2.0, and 2.2 V and for $9.0<v_{DS}<11.0 V.$

Find slope-intercept form of the equation of the line that passes through the given points P and Q. P = (6, 2) and Q = (7, -1)

Write the express ion for the solubility-product constant for each of the following ionic compounds:

$$SrSO_4$$

Find the derivative of y with respect to the given independent variable:$y=\log _{3}\left(\left(\frac{x+1}{x-1}\right)^{\ln 3}\right)$

What kinds of processes require the use of diamond tools?

Rewrite the following dialog, adding punctuation, capitalization, indentation, and speaker tags as needed. - You're kidding! Neil said. Marisa explained we had to read it in class.

Cara's muffin recipe calls for

$$1\frac{1}{2}$$

cups of flour for the muffins and

$$\frac{1}{4}$$

cup of flour for the topping. If she makes

$$\frac{1}{2}$$

of the original recipe, how much flour will she use?

For matrix

$$\begin{bmatrix}2&4\\-1&-2\end{bmatrix}$$

compute its eigenvalues and eigenvector(s), and sketch the eigenspace if the eigenvectors are real.

The numerator of a fraction is five less than the denominator. The sum of the fraction and six times its reciprocal is $\frac { 25 } { 2 } .$ Find the numerator and denominator assuming that each is an integer.

What is the difference between adaptation and evolution?

Suppose that we have an unusual type of FET for which iD=3 exp(vGS)+0.01vDS2 Here, $i_D$ is in mA, $v_{GS}$ is in volts, and $v_{DS}$ is in volts. Determine the values of $g_m$ and $r_d$ for a Q point of $V_{GSQ}=1 V$ and $V_{DSQ}=10 V.$

Suppose that we have an unusual type of FET for which iD=3vGS3+0.1vDS Here, $i_D$ is in mA, $v_{GS}$ is in volts, and $v_{DS}$ is in volts. Determine the values of $g_m$ and $r_d$ for a Q point of $V_{GSQ}=1 V$ and $V_{DSQ}=10 V.$

Derive an expression for $r_d$ in terms of K, $V_{to}, V_{GSQ},$ and $I_{DQ}$ for an NMOS transistor operating in the triode region.

Derive an expression for gm in terms of $K$, $V_{to}$, $V_{GSQ}$, and $I_{DQ}$ for an NMOS transistor operating in the triode region.