Question

The VGS(on)V_{G S(o n)} of an nn-channel E-MOSFET is
a. Less than the threshold voltage
b. Equal to the gate-source cutoff voltage
c. Greater than VDS(0π)V_{D S(0 \pi)}
d. Greater than VGS(th)V_{G S(t h)}

Solution

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Answered 1 year ago
Answered 1 year ago
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E-MOSFET is primarily used as switching device. For this the low voltage must be less than VGS(th)V_{\text{GS(th)}} (generally 0V) and high voltage must be greater than VGS(th)V_{\text{GS(th)}} (denoted as VGS(on)V_{\text{GS(on)}}).

Hence option (d) is correct answer.

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